Method for fabricating semiconductor device utilizing dual photo

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430413, 430316, 430317, 430318, 430510, 430512, G03F 736, G03C 1825

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active

056353359

ABSTRACT:
A method for fabricating a semiconductor device, including the steps of: coating an anti-reflective film over a lower layer to be patterned; coating a first photoresist film over the anti-reflective film and subjecting the first photoresist film to a light exposure process using a mask and a development process, thereby forming a first photoresist film pattern having a dimension slightly larger than a desired pattern dimension; etching an exposed portion of the anti-reflective film, thereby forming an anti-reflective film pattern; removing the first photoresist film pattern and coating a second photoresist film over the entire exposed surface of the resulting structure obtained after the removal of the first photoresist film pattern; subjecting the second photoresist film to a light exposure process using the mask and a development, thereby forming a second photoresist film pattern having the desired pattern dimension; and etching an exposed portion of the anti-reflective film pattern and then etching the lower layer, thereby forming a lower layer pattern.

REFERENCES:
patent: 4820611 (1989-04-01), Arnold, III et al.
patent: 5374503 (1994-12-01), Sachdev et al.

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