Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-18
2006-04-18
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S785000, C438S765000
Reexamination Certificate
active
07030013
ABSTRACT:
Disclosed is a method for fabricating a semiconductor device using high dielectric material. The method comprises the steps of: forming an Hf thin film on a silicon substrate; oxidizing the Hf thin film by performing an oxidizing process; and performing an annealing process after the oxidizing process, thereby forming a gate oxide film comprising an HfSixOythin film and an HfO2thin film on the silicon substrate, in which “X” is 0.4˜0.6 and “Y” is 1.5˜2.5. Therefore, since a high dielectric material HfO2, which is thicker than SiO2, is used, leakage current caused by direct tunneling of SiO2can be prevented.
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Hynix / Semiconductor Inc.
Ladas & Parry LLP
Schillinger Laura M.
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