Method for fabricating semiconductor device using amorphous...

Details Method for fabricating semiconductor device using amorphous... Method for fabricating semiconductor device using amorphous...

2005-06-10

2008-11-04

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S710000, C438S717000, C438S157000, C438S283000, C438S481000

Reexamination Certificate

active

07446049

ABSTRACT:
Disclosed is a method for fabricating a semiconductor device by using an amorphous carbon layer as a sacrificial hard mask. The method includes the steps of: forming an amorphous carbon layer on an etch target layer; forming a photoresist pattern on the amorphous carbon layer; etching the amorphous carbon layer by using the photoresist pattern to form a sacrificial hard mask; and etching the etch target layer by using the sacrificial hard mask to form a predetermined pattern.

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S. Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattic Press (1986) pp. 407-408.
Notice of Preliminary Rejection from the Korean Intellectual Property Office, dated Aug. 30, 2006, in counterpart Korean Patent Application No. 2004-59535.

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