Method for fabricating semiconductor device to minimize...

Details Method for fabricating semiconductor device to minimize... Method for fabricating semiconductor device to minimize...

2007-07-03

2007-07-03

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S678000, C438S660000, C257S021000

Reexamination Certificate

active

11026882

ABSTRACT:
A method for fabricating a semiconductor device to minimize a terminal effect in an ECP process is disclosed. The method for fabricating a semiconductor device to minimize a terminal effect in an ECP process, comprises depositing a barrier metallic layer on the top of a damascene pattern formed through an etching process, forming an Ag seed layer by employing a heating process for the reaction of the surface of the barrier metallic layer and a NH3solution of AgNO3and reductive materials in a reactor, plating a Cu layer by using the Ag seed layer through an ECP process and forming a Cu interconnect through an annealing process and a Cu CMP process.The method for fabricating a semiconductor device according to the present invention provides the improvement of uniformity by forming a seed layer with low-resistivity regardless of a thin thickness in order to avoid a terminal effect in an ECP process.

REFERENCES:
patent: 5969422 (1999-10-01), Ting et al.
patent: 6265086 (2001-07-01), Harkness
patent: 6472023 (2002-10-01), Wu et al.
patent: 6610151 (2003-08-01), Cohen
patent: 2003/0201536 (2003-10-01), Ueno

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