Method for fabricating semiconductor device having titanium sili

Details Method for fabricating semiconductor device having titanium sili Method for fabricating semiconductor device having titanium sili

1997-01-23

1998-07-07

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438592, 438655, 438656, 438664, 438755, H01L 2128

Patent

active

057768226

ABSTRACT:
In a method for producing a semiconductor device disclosed herein, a titanium film (131) is formed on a silicon layer and a titanium disilicide film (134) of a C49 structure is formed by the first rapid thermal annealing, followed by removing a titanium nitride film (132). The titanium disilicide film (134) thus formed is then subjected to phase transition to form titanium disilicide film (135a) of a C54 structure, and the titanium-excess titanium silicide film (133) is selectively removed by the second wet etching.

REFERENCES:
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 4788160 (1988-11-01), Havemann et al.
patent: 4923822 (1990-05-01), Wang et al.
patent: 5023201 (1991-06-01), Stanasolovich
patent: 5043300 (1991-08-01), Nulman
Krooshof, G.J.P. et al., Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection.II.Ti on SiO.sub.2, Journal of Applied Physics, vol. 63, No. 10, May 15, 1988, pp. 5110-5114.

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