Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-06
2007-03-06
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S475000, C257SE21008, C257S017000, C257S319000
Reexamination Certificate
active
10968940
ABSTRACT:
The present invention relates to a method for fabricating a semiconductor device with a landing plug contact structure. The method includes the steps of: forming a plurality of gate structures on a substrate; sequentially forming a first spacer and a second spacer on sidewalls of each gate structure; forming a plurality of landing plug contacts in a predetermined regions created between the gate structures; and forming a passivation layer on a resulting substrate structure including the first and the second spacers, the landing plug contacts and the gate structures. Particularly, the passivation layer which serves to prevent hydrogen ions from diffusing into a channel region is obtained by doping an N-type dopant capable of capturing hydrogen ions. The passivation layer is also obtained by forming a nitride layer capable of preventing the diffusion of hydrogen ions.
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patent: 6187627 (2001-02-01), Chen et al.
patent: 6476488 (2002-11-01), Jeng et al.
patent: 6852592 (2005-02-01), Lee et al.
patent: 6927168 (2005-08-01), Song
patent: 7045450 (2006-05-01), Lee et al.
Hynix / Semiconductor Inc.
Nhu David
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