Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-09-06
2005-09-06
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S197000
Reexamination Certificate
active
06939787
ABSTRACT:
The semiconductor device comprises a pair of impurity diffused regions formed in a silicon substrate10, spaced from each other, and a gate electrode26formed above the silicon substrate10between the pair of impurity diffused regions38intervening a gate insulation film12therebetween. The gate electrode26is formed of a polycrystalline silicon film16formed on the gate insulation film12, a polycrystalline silicon film30formed on the polycrystalline silicon film16and having crystal grain boundaries discontinuous to the polycrystalline silicon film16, a metal nitride film20formed on the polycrystalline silicon film30, and a metal film22formed on the barrier metal film20. Whereby diffusion of the boron from the first polycrystalline silicon film16toward the metal nitride film20can be decreased. Thus, depletion of the gate electrode26can be suppressed.
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Akasaka Yasushi
Murakoshi Atsushi
Ohtake Fumio
Suguro Kyoichi
Duy Mai Anh
Fujitsu Limited
Westerman Hattori Daniels & Adrian LLP
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