Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-01-23
2008-05-20
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S197000, C438S682000, C438S685000, C438S746000, C438S761000, C257SE21198, C257SE21584
Reexamination Certificate
active
07375017
ABSTRACT:
A method for fabricating a semiconductor a semiconductor device having a stacked-gate structure. A polysilicon layer is formed overlying a substrate, which is insulated from the substrate by a dielectric layer. A metal-flash layer is formed overlying the polysilicon layer, and then a tungsten nitride layer is formed overlying the titanium layer. The tungsten nitride layer is annealed using nitrogen and hydrogen gases. A tungsten layer and a cap layer are successively formed overlying the tungsten nitride layer.
REFERENCES:
patent: 6255179 (2001-07-01), Cantell et al.
patent: 6306743 (2001-10-01), Lee
patent: 2002/0074584 (2002-06-01), Yang
patent: 2004/0238876 (2004-12-01), Youn et al.
Chang Chih-Hao
Ho Tzu-En
Su Kuo-Hui
Wu Chang-Rong
Lebentritt Michael S.
Lee Kyoung
Nanya Technology Corporation
Quintero Law Office
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