Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
1999-06-29
2001-01-09
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S667000, C438S963000
Reexamination Certificate
active
06171938
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a semiconductor device; and, more particularly, to a method for fabricating a semiconductor device capable of minimizing damage of a lower layer using an insulating layer resided in an opening.
DESCRIPTION OF THE PRIOR ART
A process for forming a gate, which has line width of less than 0.3 &mgr;m, may cause many problems. For example, in case where etching selectivity of a conductive layer with respect to a photoresist pattern is not high, notching or collapse of the conductive layer may occur. When an etching process is applied at the state that a sidewall passivation of a pattern is not complete, pattern sidewalls may be undesirably etched. Also, when the over-etching conditions for removing a residual material are not appropriate, the residual material may not be completely removed. When a gate oxide layer is exposed by the etching process which forms a gate on the gate oxide layer, a plasma current occurs on the conductive layer to be floated, thereby degrading characteristics of the gate oxide layer.
At the time of etching a metal layer and forming the gate, high bias power is applied to a silicon substrate, so that the etching selectivity of the metal layer with respect to another layer beneath the metal layer becomes low. Particularly, when source and drain regions are damaged by the etching process for exposing the silicon substrate, there is a problem that operation characteristics of a semiconductor device are degraded.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide a method for fabricating a semiconductor device which easily forms a pattern of a highly integrated semiconductor device.
It is another object of the present invention to provide a method for fabricating a semiconductor device which prevents damage of a lower layer in an etching process for forming a pattern.
In accordance with an aspect of the present invention, there is provided a method for fabricating a semiconductor device, comprising the steps of: (a) forming an insulating layer on a semiconductor substrate; (b) selectively removing the insulating layer and then forming a first opening and the residual insulating layer on a bottom of the first opening; (c) removing the residual insulating layer by wet etching in order to expose the semiconductor substrate; and (d) burying a conductive layer in the first opening and then forming a conductive layer pattern connected to the semiconductor substrate.
In accordance with another aspect of the present invention, there is provided a method for fabricating a semiconductor device, comprising the steps of: (a) forming sacrificial oxide, etch stop, oxide and antireflection layers on a semiconductor substrate; (b) forming a mask on the antireflection layer; (c) selectively removing the antireflection and oxide layers and forming an opening to expose the etch stop layer; (d) removing the mask; (e) removing the etch stop layer exposed on a bottom of the opening in order to expose the sacrificial oxide layer; (f) removing the sacrificial oxide layer by wet etching in order to expose the semiconductor substrate; (g) forming a gate oxide layer on the exposed semiconductor substrate; and (h) burying a conductive layer in the opening and forming a gate electrode.
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Ha Jeong Woo
Lee Ki Yeup
Dang Trung
Hyundai Electronics Industries Co,. Ltd.
Jacobson Price Holman & Stern PLLC
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