Method for fabricating semiconductor device by using...

Details Method for fabricating semiconductor device by using... Method for fabricating semiconductor device by using...

2006-05-16

2006-05-16

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S674000, C438S680000

Reexamination Certificate

active

07045445

ABSTRACT:
Disclosed is a method for fabricating a semiconductor device by using a PECYCLE-CVD process. The method includes the steps of feeding source gas into a process chamber for predetermined time within one cycle, allowing reaction gas to flow in the process chamber at least until a plasma reaction is finished in the process chamber and feeding purge gas into the process chamber for a predetermined time within one cycle, thereby purging residual products remaining in the process chamber after source gas is reacted, forming plasma in the process chamber for a predetermined time within one cycle so as to allow reaction gas to react with plasma, thereby depositing a thin film on a wafer, and feeding purge gas into the process chamber for a predetermined time within one cycle, thereby purging residual products remaining in the process chamber after reaction gas is reacted. Superior step-coverage and uniformity of the thin film are achieved while depositing the thin film at a higher speed.

REFERENCES:
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5879973 (1999-03-01), Yanai et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6167834 (2001-01-01), Wang et al.
patent: 6189482 (2001-02-01), Zhao et al.
patent: 6444587 (2002-09-01), Lin et al.
patent: 6461970 (2002-10-01), Yin
patent: 6509280 (2003-01-01), Choi
patent: 6531389 (2003-03-01), Shue et al.
patent: 6616987 (2003-09-01), Morfill et al.
patent: 2005/0242061 (2005-11-01), Fukuda
patent: 06-122978 (1994-05-01), None
patent: 11-343574 (1999-12-01), None
patent: 2002-100574 (2002-04-01), None

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device by using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device by using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device by using... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3573293