Method for fabricating semiconductor device by forming...

Details Method for fabricating semiconductor device by forming... Method for fabricating semiconductor device by forming...

2007-09-25

2007-09-25

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S253000, C438S396000, C438S597000, C257SE23011

Reexamination Certificate

active

11083637

ABSTRACT:
A method for fabricating a semiconductor device, in which a sufficient misalignment margin is obtained when forming interconnections and contact holes, is provided. Dielectric layer patterns which define recesses in which damascene interconnections are to be formed, are formed. Then, first contact holes between the dielectric layer patterns are etched, and the first contact holes and the recesses are concurrently filled with a conductive material. The recesses can be filled with the conductive material by performing an etch-back process. The dielectric layer patterns are then etched, thereby forming the damascene interconnections and concurrently covering only a region in which second contact holes are to be formed with the dielectric layer patterns. Spaces between the dielectric layer patterns are filled with a mask layer, and then the dielectric layer patterns are selectively removed from the resultant structure, thereby forming the second contact holes aligned with the damascene interconnections.

REFERENCES:
patent: 6168992 (2001-01-01), Lee
patent: 6337267 (2002-01-01), Yang
patent: 6528368 (2003-03-01), Park
patent: 6583458 (2003-06-01), Hayashi et al.
patent: 6759333 (2004-07-01), Okajima
patent: 7022580 (2006-04-01), Natori et al.

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