Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-09-26
2009-02-24
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C451S287000
Reexamination Certificate
active
07494931
ABSTRACT:
A method for fabricating a semiconductor device includes forming a copper film above a surface of a substrate, forming on a polishing pad a material which contains copper, wherein said copper does not derive from said copper film, and after having formed the copper-containing material on said polishing pad, polishing said copper film by use of said polishing pad.
REFERENCES:
patent: 6004196 (1999-12-01), Doan et al.
patent: 6300248 (2001-10-01), Lin et al.
patent: 6341998 (2002-01-01), Zhang
patent: 6368981 (2002-04-01), Sugai et al.
patent: 6387188 (2002-05-01), Laursen et al.
patent: 6720250 (2004-04-01), Minamihaba et al.
patent: 6773337 (2004-08-01), Dabral et al.
patent: 6793797 (2004-09-01), Chou et al.
patent: 2002/0108861 (2002-08-01), Emesh et al.
patent: 2004/0203321 (2004-10-01), Tsuchiyama et al.
patent: 2001-203178 (2001-07-01), None
S. Wolf, “Silicon Processing for the VLSI Era”, Lattice Press, vol. 4, p. 747.
Fukushima Dai
Kurashima Nobuyuki
Minamihaba Gaku
Yamamoto Susumu
Yano Hiroyuki
Chen Kin-Chan
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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