Method for fabricating semiconductor device and polishing...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C451S287000

Reexamination Certificate

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07494931

ABSTRACT:
A method for fabricating a semiconductor device includes forming a copper film above a surface of a substrate, forming on a polishing pad a material which contains copper, wherein said copper does not derive from said copper film, and after having formed the copper-containing material on said polishing pad, polishing said copper film by use of said polishing pad.

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S. Wolf, “Silicon Processing for the VLSI Era”, Lattice Press, vol. 4, p. 747.

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