Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-03-15
2005-03-15
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S703000, C438S463000
Reexamination Certificate
active
06867141
ABSTRACT:
A method for fabricating a semiconductor device and forming an insulating film used therein, includes forming an isolation insulating film on a semiconductor wafer and forming gates, separated by gaps having a predetermined distance, on an active region. Next, a first interlayer dielectric film is deposited to a predetermined thickness on the semiconductor wafer having the gates, so that the gaps between the gates are not completely filled. Then, a sputtering etch is performed entirely on a surface of the first interlayer dielectric film. Thereafter, the first interlayer dielectric film is partially removed through isotropic etching. Next, a second interlayer dielectric film is deposited on the first interlayer dielectric film so that the gaps between the gates are completely filled. According to the above method, a gap between gate patterns can be completely filled without a void by performing sputtering etch on interlayer dielectric films formed on gate patterns, thereby enhancing the reliability of a semiconductor device.
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Jung Woo Chan
Lee Jong Koo
Blum David S.
Volentine & Francos, PLLC
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