Method for fabricating semiconductor device and exposure mask

Details Method for fabricating semiconductor device and exposure mask Method for fabricating semiconductor device and exposure mask

2006-11-07

2010-06-22

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S312000, C430S005000, C430S394000

Reexamination Certificate

active

07741016

ABSTRACT:
The method for fabricating the semiconductor device includes the step of forming a photoresist film84over a substrate10, the step of exposing interconnection patterns to the photoresist film84, the step of exposing to the photoresist film84hole patterns of a plurality of holes positioned at ends or bent portions of the interconnection patterns where holes to be connected to the interconnection patterns are to be formed, and the step of developing the photoresist film84with the interconnection patterns and the holes patterns exposed to. Thus, the insufficient exposure energy at the ends or the bent portions of the patterns due to optical proximity effect is compensated to prevent the shortening at the pattern ends or the rounding at the pattern bent portions. The contacts with the contact plugs connected to the pattern ends or the pattern bent portions can be ensured.

REFERENCES:
patent: 6153357 (2000-11-01), Okamoto et al.
patent: 6303272 (2001-10-01), Furukawa et al.
patent: 6492073 (2002-12-01), Lin et al.
patent: 10-92714 (1998-04-01), None
patent: 10-289861 (1998-10-01), None
patent: 2001-356465 (2001-12-01), None
patent: 2002-250999 (2002-09-01), None

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