Method for fabricating semiconductor device and etchant for poly

Details Method for fabricating semiconductor device and etchant for poly Method for fabricating semiconductor device and etchant for poly

1978-07-12

1980-08-19

Esposito, Michael F.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156659, 156664, 156668, 156901, 427 96, 252 791, 430311, 430313, 430315, 430318, 430319, H01L 700, C09K 1300, C23F 100

Patent

active

042182832

ABSTRACT:
A semiconductor device fabricated by forming a layer of cured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said cured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said cured layer through said prescribed pattern, whereby said cured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.

REFERENCES:
patent: 3395057 (1968-07-01), Fick
patent: 3700497 (1972-10-01), Epifano et al.
patent: 4113550 (1978-09-01), Saiki
Agnihotri et al., IBM Tech. Bulletin, "Solvent Coating", vol. 16, No. 4 (1973) p. 1284.
Loukianott, IBM Tech. Bulletin, Etchant . . . Cured Polyamides, vol. 15, No. 9 (1973) p. 2820.

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