Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2004-05-07
2009-06-16
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S164000, C438S585000
Reexamination Certificate
active
07547589
ABSTRACT:
The invention provides a technique that enables formation of minute patterns on an uneven substrate in volume production without reducing productivity. The method for fabricating a semiconductor device includes: first patterning a semiconductor film on a substrate to form element regions, each of which will be provided with a source/drain region and a channel region, second forming a gate insulating film covering segments of the patterned semiconductor film in the respective element regions, third forming gate electrodes on the gate insulating film at predetermined positions, and fourth forming the source/drain region and the channel region in each element region. At least the gate electrodes are formed by a process including an exposure step through a holographic exposure mask in the third step, and by a process including an exposure step through a projection exposure mask, the element regions are formed in the first step, and the source/drain regions and the channel regions are formed in the fourth step.
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Oliff & Berridg,e PLC
Seiko Epson Corporation
Trinh Michael
LandOfFree
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