Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-08-09
2008-09-16
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S225000, C438S297000
Reexamination Certificate
active
07425475
ABSTRACT:
A method for fabricating a semiconductor device according to the present invention is a method for fabricating a semiconductor device including a substrate layer including a plurality of first regions each having an active region and a plurality of second regions each being provided between adjacent ones of the first region. The fabrication method includes an isolation insulation film formation step of forming an isolation insulation film in each of the second regions so that a surface of the isolation insulation film becomes at the same height as that of a surface of a gate oxide film covering the active region, a peeling layer formation step of forming a peeling layer by ion-implanting hydrogen into the substrate layer after the isolation insulation film formation step, and a separation step of separating part of the substrate layer along the peeling layer.
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Japanese Notice of Rejection mailed Jan. 22, 2008 in JP application 2004-246579.
Fukushima Yasumori
Moriguchi Masao
Takafuji Yutaka
Nguyen Tuan H
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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