Method for fabricating semiconductor device and...

Details Method for fabricating semiconductor device and... Method for fabricating semiconductor device and...

2007-01-23

2007-01-23

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C438S003000, C438S243000, C438S240000, C438S386000

Reexamination Certificate

active

11022973

ABSTRACT:
As a method for fabricating a semiconductor device, a lower electrode is first formed on a semiconductor substrate and then a first ferroelectric film is formed on the lower electrode by CVD using a first source gas. Thereafter, a second ferroelectric film is formed on the first ferroelectric film by CVD using a second source gas. Subsequently, an upper electrode is formed on the second ferroelectric film. In this method, the concentration of bismuth contained in the first source gas is different from the concentration of bismuth contained in the second source gas.

REFERENCES:
patent: 5525434 (1996-06-01), Nashimoto
patent: 6100200 (2000-08-01), Van Buskirk et al.
patent: 6440591 (2002-08-01), Matsunaga et al.
patent: 6940740 (2005-09-01), Ueda et al.
patent: 2964780 (1999-08-01), None

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