Method for fabricating semiconductor device and...

Details Method for fabricating semiconductor device and... Method for fabricating semiconductor device and...

2006-08-29

2006-08-29

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

07098154

ABSTRACT:
Part of a first oxide film formed by thermal oxidation is removed by etching. A second oxide film is formed in the part of substrate from which the first oxide film has been removed using heated nitric acid. The two oxide films are nitrided by a nitrogen plasma having a low energy so as to be first and second gate insulating films, i.e., oxynitride films, respectively.

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“S. M. Sze, VLSI Technology” McGraw-Hill, 1984, pp. 131-167.

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