Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-12-05
2006-12-05
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S474000, C257SE21056, C257SE21537, C257SE21679
Reexamination Certificate
active
07144829
ABSTRACT:
A first thermal treatment, which is performed at a temperature within 650–750° C. for 30–240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900–1100° C. for 30–120 minutes, are performed as the initial thermal treatments on a semiconductor wafer composed of silicon. Further, before forming a gate insulating film, the temperature is increased to 1000° C. at a temperature increasing rate of 8° C./min in a nitrogen ambient, and a thermal treatment is performed at a temperature of 1000° C. for 30 minutes as a third thermal treatment.
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Everhart Caridad
McDermott Will & Emery LLP
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