Semiconductor device manufacturing: process – Forming schottky junction
Patent
1996-08-06
1997-08-19
Trinh, Michael
Semiconductor device manufacturing: process
Forming schottky junction
438670, 438950, H01L 21441
Patent
active
056588267
ABSTRACT:
Method for fabricating a semiconductor device is disclosed, including the steps of: forming a first resist layer on a substrate; patterning a predetermined region of the first resist layer to form a pattern having a first width which exposes the substrate; forming an insulating film on an entire surface of the substrate including the first resist layer; forming a second resist layer on the insulating film; patterning a predetermined region of the second resist layer to form a pattern over the pattern of the first resist layer having a second width which exposes the insulating film; using the second resist layer as a mask in etching the exposed insulating film to form sidewall spacers at sides of the pattern of the first resist layer; forming a metal layer on an entire resultant surface including the second photoresist layer; and, removing the first and second resist layers and the insulating film to form a T form gate electrode.
REFERENCES:
patent: 5266526 (1993-11-01), Aoyama et al.
patent: 5288654 (1994-02-01), Kasai et al.
patent: 5358885 (1994-10-01), Oku et al.
patent: 5496748 (1996-03-01), Hattori et al.
LG Semicon Co. Ltd.
Trinh Michael
White John P.
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