Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-01-08

2008-01-08

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S396000, C438S763000

Reexamination Certificate

active

07316973

ABSTRACT:
The present invention relates to a method for fabricating a semiconductor device capable of preventing bridge formation caused by damages to a capacitor oxide structure including a phosphosilicate glass (PSG) layer and a tetraethylorthosilicate (TEOS) layer during a wet cleaning process. The method includes the steps of: forming a PSG layer on a substrate; forming a capping layer on the PSG layer; forming a TEOS layer on the capping layer; selectively etching the TEOS layer, the capping layer and the PSG layer to form a plurality of openings exposing predetermined portions of the substrate; cleaning the openings; forming a conductive layer on the openings; and removing the conductive layer until the TEOS layer is exposed, so that the conductive layer is isolated for each opening.

REFERENCES:
patent: 6423610 (2002-07-01), Roh
patent: 6706635 (2004-03-01), Khan et al.
patent: 6893983 (2005-05-01), Sun et al.
patent: 6979615 (2005-12-01), Khan et al.
patent: 2002/0039827 (2002-04-01), Roh
patent: 2003/0228764 (2003-12-01), Khan et al.
patent: 2004/0053455 (2004-03-01), Khan et al.
patent: 2004/0119145 (2004-06-01), Sun et al.
patent: 2004/0150096 (2004-08-01), Purushothaman et al.
patent: 2005/0221595 (2005-10-01), Khan et al.
patent: 2006/0003582 (2006-01-01), Roh
patent: 2006/0231898 (2006-10-01), Jeong et al.
patent: 2007/0057302 (2007-03-01), Ho et al.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2769926