Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2011-04-12

2011-04-12

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S494000, C438S689000, C438S692000, C438S693000, C438S697000, C438S703000, C438S706000, C438S707000, C438S710000, C438S717000, C438S736000, C438S738000, C438S740000, C438S761000, C438S763000

Reexamination Certificate

active

07923372

ABSTRACT:
A method for fabricating a semiconductor device includes forming a plurality of etch mask patterns over an etch target layer, each of the etch mask patterns including a first hard mask, a first pad layer, and a second pad layer, forming spacers on both sidewalls of the etch mask patterns, the spacers including a material substantially the same as that of the first pad layer, forming a second hard mask over the resulting substrate structure until gaps between the etch mask patterns are filled, the second hard mask including a material different from that of the first hard mask but substantially the same as that of the second pad layer, planarizing the second hard mask until the first pad layer is exposed, removing the first pad layer and the spacers, and etching the etch target layer using the remaining first and second hard masks as an etch barrier layer.

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