Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2011-03-22

2011-03-22

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S647000, C438S684000, C438S714000, C438S719000, C438S734000

Reexamination Certificate

active

07910481

ABSTRACT:
A method for fabricating a semiconductor device includes forming an interlayer dielectric layer having a plurality of contact holes over a substrate, forming a conductive layer by filling the contact holes to cover the interlayer dielectric layer, performing a first main etch process to partially etch the conductive layer to form a first conductive layer, performing a second main etch process to etch the first conductive layer using an etch gas having a slower etch rate with respect to the first conductive layer than an etch gas used in the first main etch process until an upper surface of the interlayer dielectric layer is exposed to form a second conductive layer, and performing an over-etch process to etch a certain portion of the second conductive layer, and at the same time, to etch a certain portion of the interlayer dielectric layer to form a landing plug.

REFERENCES:
patent: 6225220 (2001-05-01), Chi et al.
patent: 6239022 (2001-05-01), Seo et al.
patent: 6255226 (2001-07-01), Zheng et al.
patent: 6593242 (2003-07-01), Morgenstern
patent: 2004/0152331 (2004-08-01), Xu et al.
patent: 2007/0224828 (2007-09-01), Kushibiki et al.
patent: 2001-274238 (2001-10-01), None
patent: 2006-190945 (2006-07-01), None
patent: 1020020002583 (2002-01-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Dec. 16, 2010.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2734713