Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-01
2011-03-01
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S694000, C438S725000, C438S780000, C438S781000
Reexamination Certificate
active
07897504
ABSTRACT:
A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or the amorphous carbon film can be reduced or a compression stress film is formed between the etched layer or the amorphous carbon film to prevent a lifting phenomenon from occurring and thus another pattern can be formed to fabricate a highly integrated semiconductor device.
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Cho Whee Won
Jeong Cheol Mo
Kim Jung Geun
Myung Seong Hwan
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Parker John M
Smith Matthew S
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