Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-16
2011-08-16
Ahmadi, Mohsen (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S653000, C438S668000, C438S672000, C438S675000, C257SE21575, C257SE21577, C257SE21584, C257SE21597
Reexamination Certificate
active
07998862
ABSTRACT:
A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the isolation layer is formed, arranging a solvent, which contains electrically charged metal particles, on the semiconductor substrate where the diffusion barrier layer is formed, and filling the via hole with the metal particles by moving the metal particles using applied external force. The applied external force said includes a voltage causing an electric current to flow between the semiconductor substrate and the solvent, an electrical field applied between the semiconductor substrate and the solvent, or a magnetic field applied between the semiconductor substrate and the solvent.
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Baek Kyu-Ha
Do Lee-Mi
Kim Dong-pyo
Park Ji Man
Park Kunsik
Ahmadi Mohsen
Electronics and Telecommunications Research Institute
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