Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2011-05-24

2011-05-24

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S507000

Reexamination Certificate

active

07947578

ABSTRACT:
A method for fabricating a semiconductor device including: cleaning an apparatus used to grow a layer including Ga; performing a first step of forming a first layer on a substrate made of silicon by using the apparatus, the first layer including a nitride semiconductor that does not include Ga as a composition element and has a Ga impurity concentration of 2×1018atoms/cm3or less; and performing a second step of forming a second layer on the first layer by using the apparatus after the first step is repeatedly carried out multiple times, the second layer including a nitride semiconductor including Ga.

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European Search Report dated Jul. 22, 2010, issued in corresponding European Application No. 10158830.9.

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