Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2011-06-14

2011-06-14

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S717000, C438S942000, C257SE21311, C257SE21638

Reexamination Certificate

active

07960265

ABSTRACT:
A method for fabricating a semiconductor device includes forming an etch target layer over a substrate including a cell region and a peripheral region, forming a first mask pattern having a first portion and a second portion over the etch target layer in the cell region and forming a second mask pattern having a first portion and a second portion over the etch target layer in the peripheral region, forming a photoresist pattern over the cell region, trimming the first portion of the second mask pattern, removing the photoresist pattern and the second portion of the first mask pattern and the second portion of the second mask pattern, and etching the etch target layer to form a pattern in the cell region and a pattern in the peripheral region.

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