Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1997-10-14

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438655, 438647, 438683, 438231, 257412, 257413, H01L 213205, H01L 214763

Patent

active

060966300

ABSTRACT:
Method for fabricating a semiconductor device, is disclosed, which is suitable for improving a resistivity, including the steps of forming a silicon layer on a substrate, forming a crystalline metal silicide layer on the silicon layer, forming an amorphous metal silicide layer by injecting ions into the crystalline metal silicide layer, and crystallizing the amorphous metal silicide by heat treating the amorphous metal silicide.

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T.H. Tom Wu et al.; "Properties of WSi.sub.x using dichlorosilane in a single-water system;" J. Vac. Sci, technol. B6 (6), Nov./Dec. 1988; pp. 1707-1713.
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