Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-02-26
1999-12-28
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438275, 438592, 438595, 438682, H01L 218234, H01L 2184
Patent
active
060080779
ABSTRACT:
For a semiconductor device having a silicide protection film, provided is a semiconductor device fabrication method which prevents problems caused by overetching when forming the silicide protection film. A silicon oxide film (8) is formed all over the surface in a protection region (PR) and in an ordinary region (OR). Then N-type impurities are introduced by an ion implantation from above the silicon oxide film (8) through the silicon oxide film (8) to form a source/drain region (7) in a self-aligned manner in the surface of an SOI layer (3).
REFERENCES:
patent: 4874713 (1989-10-01), Gioia
patent: 5021853 (1991-06-01), Mistry
patent: 5262344 (1993-11-01), Mistry
patent: 5543338 (1996-08-01), Shimoji
patent: 5585299 (1996-12-01), Hsu
patent: 5589423 (1996-12-01), White et al.
patent: 5672527 (1997-09-01), Lee
patent: 5814537 (1998-09-01), Maa et al.
T. Iwamatsu, et al., IEDM, vol. 93, pp. 475-478, "CAD-Compatible High-Speed CMOS/SIMOX Technology Using Field-Shield Isolation For 1M Gate Array", 1993.
T. Iwamatsu, et al., Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, pp. 575-577, "High-Speed 0.5.mu.M SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications", 1995.
S. Maeda, et al., IEDM, vol. 96, pp. 129-132, "Suppression of Delay Time Instability on Frequency Using Field Shield Isolation Technology for Deep Sub-Micron SOI Circuits", 1996.
Mitsubishi Denki & Kabushiki Kaisha
Trinh Michael
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