Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1996-03-13

1998-06-09

Loring, Susan A.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 58, 216 72, 216 76, 437228, 437225, 437248, 437974, B44C 122, H01L 21465, H01L 21324

Patent

active

057628130

ABSTRACT:
By using first mixed gas containing carbon atoms and fluorine atoms, a semiconductor substrate is etched. In order to remove a damage layer formed on the surface of the semiconductor substrate by this etching processing, the semiconductor substrate is etched by second mixed gas including gas containing fluorine atoms and oxygen gas having a partial pressure ratio of at least 70%. Thereafter, a semiconductor oxide film is formed on the semiconductor substrate to fabricate a semiconductor device.

REFERENCES:
Watanabe, Technology Trend of High Density Memory, Record of SEMI Technology Symposium 93, pp. 11-17, Dec. 1993.
Ikeda et al., Silicon Surface Damage Caused by Fluorocarbon Gas Plasma, Record of 45th Symposium of Semiconductor and Integrated Circuit Technique, pp. 76-81, Dec. 1993 (Abstract Considered Only).
Makihara, Influence Surface Micro-roughness on Device Performance, Record of Ultraclean Technology Workshop, pp. 73-91, Sep. 1992.

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