Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1998-10-29

2000-08-15

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438660, H01L 213205

Patent

active

061036099

ABSTRACT:
Method for fabricating a semiconductor device, is disclosed, in which a grain size is made coarse for forming a thin film with a low resistance, including the steps of (1) depositing an insulating film on a substrate, (2) depositing a silicon layer on the insulating film, (3) depositing an amorphous metal nitride film on the silicon layer, and (4) heat treating the amorphous metal nitride film to alter into a crystalline pure metal film.

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M.T. Takagi et al., ULSI Device Engineering Lab, IEDM 96 pp. 455-458.
Y. Akasaka et al., ULSI research Labs, 1995 ISMIC 104/95/0168, pp. 168-174.

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