Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-05-29

2009-12-22

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S677000, C257SE21548, C257SE21582, C257SE21479

Reexamination Certificate

active

07635646

ABSTRACT:
A method for fabricating a semiconductor device, includes forming a first dielectric film above a substrate, forming an opening in the first dielectric film, forming a catalytic characteristic film using at least one of a metal having catalytic characteristics and a conductive oxide having catalytic characteristics as its material on sidewalls and at a bottom of the opening, depositing a conductive material film using a conductive material in the opening in which the catalytic characteristic film is formed on the sidewalls and at the bottom, removing the catalytic characteristic film formed on the sidewalls of the opening, and forming a second dielectric film above the first dielectric film and the conductive material film after the removing.

REFERENCES:
patent: 6921712 (2005-07-01), Soininen et al.
patent: 7276796 (2007-10-01), Yang et al.
patent: 2007/0252282 (2007-11-01), Anderson et al.
patent: 2008/0153252 (2008-06-01), Liu et al.
patent: 2009/0081862 (2009-03-01), Chen et al.
patent: 2003-163266 (2003-06-01), None
Translation of JP 2003-163266, H. Kawashima, (Jun. 6, 2003).

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