Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-11-09

2008-10-14

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S254000, C438S597000, C438S672000, C257SE21257, C257SE21577

Reexamination Certificate

active

07435677

ABSTRACT:
A method for fabricating a semiconductor device includes: forming a first inter-layer insulation layer over a substrate where a plurality of first contact holes are formed; forming a conductive layer over the first inter-layer insulation layer to fill the first contact holes; etching the conductive layer such that a surface of the first inter-layer insulation layer is higher than that of the conductive layer, whereby a plurality of contact plugs filling the first contact holes are formed; and forming an etch stop layer more thickly over the surfaces of the contact plugs than the surface of the first inter-layer insulation layer.

REFERENCES:
patent: 5478772 (1995-12-01), Fazan
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 6136643 (2000-10-01), Jeng et al.
patent: 6943081 (2005-09-01), Lee et al.
patent: 2003-0006893 (2003-01-01), None
patent: 2003-0039236 (2003-05-01), None
patent: 10-2006-0000022 (2006-01-01), None

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