Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-09-13

2008-01-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S231000, C438S232000, C438S372000, C438S508000

Reexamination Certificate

active

07314805

ABSTRACT:
An implantation step of a dopant ion for forming source and drain regions (S and D) is divided into one implantation of a dopant ion for forming a p
junction with a well region (3), and one implantation of a dopant ion that does not influence a position of the p
junction between the source and drain regions (S and D) and the well region with a shallow implantation depth and a large implantation amount. After conducting an activation heat treatment of the dopant, a surface of the source/drain region is made into cobalt silicide12, so that the source/drain region (S and D) can have a low resistance, and a p
junction leakage can be reduced.

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