Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1992-08-05

1993-11-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

257632, 257642, H01L 2934

Patent

active

052647315

ABSTRACT:
A method of fabricating a semiconductor device by (1) forming a semiconductor device having electrodes on the semiconductor substrate, (2) immersing the substrate into a solution which contains a silane group surface active agent so that a monomolecular film is formed an a surface of the substrate, and (3) molding the substrate having the monomolecular film by a synthetic resin. The monomolecular film functions as a protection film for protecting the semiconductor device.

REFERENCES:
patent: 4199649 (1980-04-01), Yundt
patent: 4230754 (1980-10-01), Maher et al.
patent: 4377619 (1983-03-01), Schonhorn et al.
patent: 4673474 (1987-06-01), Ogawa
patent: 4696838 (1987-09-01), Miyata et al.
patent: 4751100 (1988-06-01), Ogawa
patent: 4751171 (1988-06-01), Ogawa
patent: 4761316 (1988-08-01), Ogawa
patent: 4824766 (1989-04-01), Ogawa
Streetman, B., Solid State Electronic Devices, Prentice-Hall, 1972, pp. 377-379.

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