Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-04-08

2008-04-08

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S620000, C438S637000, C438S672000, C438S508000

Reexamination Certificate

active

11161080

ABSTRACT:
A method for fabricating a semiconductor device is described. The method includes providing a substrate having a trench therein, and a trench device in the trench. The trench device includes two gate structures disposed on the sidewalls of the trench, a doped region in the substrate between the gate structures and an inter-gate dielectric layer disposed on the surface of the gate structures. A thermal treatment process in a nitrogen-containing ambient is performed to remove the native oxide layer formed on the surface of the doped region. Then, a conductive layer is formed to fill in the trench.

REFERENCES:
patent: 2002/0192960 (2002-12-01), Hillyer et al.
patent: 2005/0142845 (2005-06-01), Lee et al
patent: 2006/0128085 (2006-06-01), Shibib et al.
Titled “Characterization of Thin Oxide Removal by Rapid Thermal Annealing Treatment” by Hashim et al. in Nov. 1998 in Bangi, Malaysia. pp. 213-216 offered by IEEE.

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