Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2008-04-29

2008-04-29

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21228

Reexamination Certificate

active

10876783

ABSTRACT:
Disclosed is a method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process due to a density difference created by reliance on a thickness of a SOG layer subjected to a curing process and of overcoming defects caused by an improper contact opening in a certain region and a punch taken place by micro voids of an APL layer. Particularly, the method includes the steps of: forming a plurality of conductive structure on a substrate; forming a spin-on-glass layer; curing the spin-on-glass layer; forming an advanced-planarization-layer on the spin-on-glass layer; and forming a plurality of contact holes by selectively etching the advanced-planarization-layer and the spin-on-glass layer, thereby exposing portions of the substrate.

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