Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-10-16

2007-10-16

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S719000, C438S724000, C438S734000, C438S738000

Reexamination Certificate

active

11479008

ABSTRACT:
A method for fabricating a semiconductor device includes forming fuse lines over a substrate, forming a first insulation layer over the fuse lines, the first insulation layer including a silicon-rich oxynitride (SRON) layer at the top, forming a second insulation layer over the first insulation layer, the second insulation layer configured in a multiple-layer structure and including oxide-based materials, performing a first repair etching process to selectively etch the second insulation layer, performing a second repair etching process to remove the second insulation layer remaining after performing the first repair etching process, and performing a third repair etching process to etch the first insulation layer in a manner such that the first insulation layer remains with a predetermined thickness above the fuse lines.

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