Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1997-04-24

2000-05-02

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438662, 438686, H01L 2144

Patent

active

060572345

ABSTRACT:
There are disclosed apparatus and method for well performing a reflow step that reduces malfunctions of TFTs due to defective contacts. The apparatus has at least first and second hermetic reaction chambers whose ambients can be controlled independently. These two chambers are connected together hermetically. In the first chamber, a film consisting only or chiefly of aluminum is formed by sputtering. In the second reaction chamber, a heat treatment is performed to impart fluidity to at least a part of the film consisting only or chiefly of aluminum.

REFERENCES:
patent: 5002464 (1991-03-01), Lee
patent: 5693541 (1997-12-01), Yamazaki et al.
patent: 5779925 (1998-07-01), Hashimoto et al.

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1593554