Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-08-14

2007-08-14

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S709000, C438S719000, C438S736000

Reexamination Certificate

active

11296346

ABSTRACT:
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a hard mask layer on the inter-layer insulation layer; etching the hard mask layer using a contact mask; and etching the inter-layer insulation layer using the hard mask layer as an etch barrier, thereby obtaining an opening wherein the etching of the hard mask layer and the etching of the inter-layer insulation layer are performed in one etch chamber.

REFERENCES:
patent: 6008139 (1999-12-01), Pan et al.
patent: 6287951 (2001-09-01), Lucas et al.
patent: 2005/0167397 (2005-08-01), Chen et al.
patent: 2006/0154487 (2006-07-01), Wang et al.
patent: 10 2005-0038869 (2005-04-01), None
patent: 10 2005-0045723 (2005-05-01), None
Notice of Preliminary Rejection issued on May 19, 2006, by the Korean Intellectual Property Office in counterpart Korean Application No. 2005-0056403 and English translation thereof.

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