Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-03
2007-07-03
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S666000, C438S701000, C438S713000, C438S978000
Reexamination Certificate
active
10786070
ABSTRACT:
A method for fabricating a semiconductor device has the steps of forming a conductive film on a substrate, forming an insulating film such that the conductive film is covered with the insulating film, forming, in the insulating film, a hole having a bottom portion not reaching the conductive film by using a mask layer having a first opening pattern, and forming, in the insulating film, an opening for exposing the conductive film by using a mask layer having a second opening pattern having an opening diameter larger than an opening diameter of the first opening pattern. An obtuse angle is formed between a wall surface of the opening and a bottom surface of the opening.
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Fourson George R.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Parker John M.
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