Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-03
2007-04-03
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S680000, C438S692000, C438S700000, C257SE21008, C257S017000, C257S245000, C257S304000, C257S576000
Reexamination Certificate
active
10974850
ABSTRACT:
According to an aspect of the invention, there is provided a method for fabricating a semiconductor device. The method may include forming at least one interconnection layer having a low dielectric constant insulating film and an interconnection buried in the low dielectric constant insulating film, forming a trench or a hole extending in the interconnection layer, performing heat treatment for the interconnection layer having the trench or the hole, and burying a material in the trench or the hole.
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Office Action issued by the Patent Office of the People's Republic of China dated Mar. 10, 2006.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Nhu David
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