Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1981-08-04
1983-05-17
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156606, 156DIG80, 156DIG102, 156DIG111, C30B 102
Patent
active
043838839
ABSTRACT:
A method is provided for fabricating a semiconductor device comprising the steps of: forming a groove on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groove; irradiating part of said semiconductor layer on said groove with an energy beam to convert said part into single crystals; and irradiating the remaining part of said semiconductor layer with said energy beam while displacing said energy beam to thereby sequentially form single crystals utilizing said single crystal semiconductor layer as a growing nucleus so as to form a continuous single crystal semiconductor on said insulator body. The method of the invention allows photolithography with good precision.
REFERENCES:
patent: 3341361 (1967-09-01), Gorski
patent: 3348962 (1967-10-01), Grossman et al.
patent: 3549432 (1970-12-01), Sivertsen
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3655439 (1972-04-01), Seiter
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4058418 (1977-11-01), Lindmayer
patent: 4196041 (1980-04-01), Baghdadi et al.
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4333792 (1982-06-01), Smith
Bean et al., "Epitaxial Layer Crystallization", published in App. Phys. Lett. (33), Aug. 1, 1978, pp. 227-230.
Gat et al., "CW Laser Anneal", published in Appl. Phys. Lett. (33), Oct. 15, 1978, pp. 775-778.
M. W. Geis et al., "Crystallographic Orientation of Silicon on an Amorphous Substrate Using an Artificial Surface-Relief Grating and Laser Crystallization," Appl. Phys. Lett., vol. 35, pp. 71-74, Jul. 1, 1979.
M. Tamura et al., "Si Bridging Epitaxy from Si Windows onto SiO.sub.2 by Q-Switched Ruby Laser Pulse Annealing," Jpn. J. Appl. Phys., vol. 19, pp. L23-26, Jan. 1980.
Bernstein Hiram H.
Tokyo Shibaura Denki Kabushiki Kaisha
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