Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-06-06

2006-06-06

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S423000, C438S766000, C438S575000

Reexamination Certificate

active

07056841

ABSTRACT:
A method for fabricating a semiconductor device for reducing coupling noise resulting from high integration of devices, comprises the steps of forming a plurality of metal wiring leads spaced from each other by a predetermined distance and arranged on a semiconductor substrate having a predetermined under layer; forming an insulating interlayer on an entire surface of the semiconductor substrate so that the metal wiring leads are covered with the insulating interlayer; and ion-implanting conductive impurities having a plurality opposite to each other into side end layers of the insulating interlayer disposed between the metal wiring leads so as to reduce the internal charges electrified due to an applied external electric field.

REFERENCES:
patent: 5691252 (1997-11-01), Pan
patent: 5821585 (1998-10-01), Maegawa
patent: 2005/0167742 (2005-08-01), Challa et al.

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