Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-17
2006-10-17
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S672000, C438S970000
Reexamination Certificate
active
07122467
ABSTRACT:
Disclosed is a method for fabricating a semiconductor device with an improved process margin obtained by preventing damage to an inter-layer insulation layer during a wet cleaning process. Particularly, the method includes the steps of: forming a plurality of a first conductive pattern having a stack pattern of a first conductive and a first hard mask; forming a first inter-layer insulation layer of a good gap-fill property with a height between the first conductive material and the first hard mask on the first conductive layer; forming a second inter-layer insulation layer; forming a second conductive layer contacted the first conductive layer between the plurality of the first conductive patterns as passing through the first and the second inter-layer insulation layers; forming a third inter-layer insulation layer; forming a plurality of second conductive patterns; forming a fourth inter-layer insulation layer; and forming a third conductive layer contacted to the second conductive layer.
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Jung Tae-Woo
Lee Sung-Kwon
Chaudhari Chandra
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hynix / Semiconductor Inc.
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