Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2006-10-10

2006-10-10

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

C438S706000

Reexamination Certificate

active

07119020

ABSTRACT:
A silicon oxide film is formed on a semiconductor substrate made of silicon. Subsequently, a resist film containing carbon is formed on the silicon oxide film, and thereafter the formed resist film is patterned, thereby forming a resist pattern. Subsequently, the resist pattern is exposed to a sulfur dioxide gas, and then dry etching is performed on the silicon oxide film by using the resist pattern exposed to the sulfur dioxide gas as a mask.

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patent: 6576066 (2003-06-01), Namatsu
patent: 6746961 (2004-06-01), Ni et al.
patent: 6869542 (2005-03-01), Desphande et al.
patent: 7-2888247 (1995-10-01), None
patent: WO98/32162 (1998-07-01), None

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