Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-09-19
2006-09-19
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S312000, C438S694000
Reexamination Certificate
active
07109095
ABSTRACT:
Immediately after a Si/SiGe film containing a contaminant is formed over all surfaces of a substrate by epitaxial growth, a portion of the Si/SiGe film formed to the back surface side of the substrate is removed by wet etching. In addition, the Si/SiGe film is subjected to processing with heating in a container, after which a dummy run is carried out in the container. These processings prevent secondary wafer contamination through a stage, a robot arm or a vacuum wand for handling a wafer and the contamination of the container also used in the fabrication process of a semiconductor device free from any group IV element but Si.
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Aoki Shigetaka
Asai Akira
Notake Hidenori
Ohnishi Teruhito
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Nguyen Tuan H.
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