Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-04-05
1999-11-16
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438686, 438396, H01L 214763
Patent
active
059857579
ABSTRACT:
A method for fabricating highly integrated semiconductor devices with capacitors having a dielectric film comprised of a thin film exhibiting a high dielectric constant to obtain a sufficient capacitance, involving the formation of an under electrode over a wafer formed with an oxide film at a high temperature, and annealing the resulting wafer in a vacuum such that the under electrode has a tight and smooth structure. By virtue of the tight and smooth structure of the under electrode, subsequent processing steps can be easily carried out. It is also possible to achieve an improvement in the reliability and uniformity of semiconductor devices as well as a high integration of such semicoductor devices.
REFERENCES:
patent: 4870033 (1989-09-01), Hotta et al.
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5291036 (1994-03-01), Tran et al.
patent: 5335138 (1994-08-01), Sandu
patent: 5372962 (1994-01-01), Hirota et al.
patent: 5596214 (1997-01-01), Endo
patent: 5688565 (1997-11-01), McMillan et al.
Tsui, Bing-Yue, et al., "Dielectric Degradation of Pt/Sio.sub.2 /Si Structures During Thermal Annealing", Solid-State Electronics, vol. 36, No. 4, pp. 583-593 (1993).
Kim Ho G.
Kim Jong Choul
Lee Seaung Suk
Lee Won Jae
Berry Renee R.
Bowers Charles
Hyundai Electronics Industries Co,. Ltd.
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