Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-04-12

2005-04-12

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S645000, C257S751000

Reexamination Certificate

active

06878619

ABSTRACT:
The method comprises the steps of sequentially forming a USG film32, an SiN film34, a USG film36, a carbon film50and an anti-reflection coating52for protecting the carbon film50from ashing, forming a resist film56with openings in prescribed regions on the anti-reflection coating52, etching the anti-reflection film52and the carbon film50with the resist film56as a mask, removing the resist film by ashing, and anisotropically etching the USG films36, 32with the carbon film50as a hard mask. Accordingly, the insulation film can be etched at a high selective ratio, and the increase of dimensions of a pattern of the mask with respect to dimension of a pattern of the resist film used in the patterning can be suppressed.

REFERENCES:
patent: 6030901 (2000-02-01), Hopper et al.
patent: 6121146 (2000-09-01), Yoon et al.
patent: 6316329 (2001-11-01), Hirota et al.
patent: 6455409 (2002-09-01), Subramanian et al.
patent: 63-168810 (1988-07-01), None
patent: 05-090226 (1993-04-01), None
patent: 09-082798 (1997-03-01), None

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